Compound Semiconductor Bulk Materials and Characterizations by Osamu Oda

By Osamu Oda

This ebook is anxious with compound semiconductor bulk fabrics and has been written for college kids, researchers and engineers in fabric technology and equipment fabrication. It deals them the easy and intermediate wisdom of compound semiconductor bulk fabrics beneficial for coming into this box. within the first half, the e-book describes the actual houses, crystal development applied sciences, ideas of crystal development, a variety of defects in crystals, characterization recommendations and purposes. within the moment and the 3rd elements, the publication experiences a number of compound semiconductor fabrics, together with very important commercial fabrics and the result of fresh examine.

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In order to prevent impurity segregation, the floating cru~ i b l method e ~ ~ has been developed. CRYSTAL GROWTH METHOD t 35 Pulling direction High pressure inert gas Seed crystal \ H - &Seedcrystal crystal crystal Heater Heater Melt Melt Crucible Crucible Sucepter (a) Fig. 4 Crystal pulling methods. (a) Czochralski (CZ) and (b) Liquid Encapsulated Czochralski (LEC) methods. 45,46 to apply the Czochralski method to the crystal growth of dissociative compound semiconductor materials, there is the Liquid Encapsulating Czochralski (LEC) method.

R. Pamplin, J. Phys. Chem. Solids 25 (1964) 675. PHYSICAL PROPERTIES 27 18. C. Phillips, An Introduction to Crystallography (Wiley, 3rd ed. 1963). 19. C. Kittel, Introduction to Solid State Physics, 5th ed. (John Wiley & Sons, New York 1976). 20. G. Wyckoff, Crystal Structures, 2nd ed. (Interscience, 1963) 21. L. , 1963). 22. J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B14 (1971) 556. 23. C. Casey, Jr. A. Trumbore, Muter. Sci. Engineer. 6 (1970) 69. 24. Data presented in a pamphlet of Cambridge Chemical Company.

3 2 , 3 3 In this method, the temperature difference and the distance between the growth interface and the submerged heater are held constant so that crystal growth can be performed without significant convection and the segregation of impurities can be kept constant. 34in a pyrolytic boron nitride crucible without using seed crystals. In the VGF method, instead of lowering the crucible, the temperature profile is changed for growing crystals (Fig. 2(b)). The advantages of this method compared with the VB method are as follows.

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