By B. Jayant Baliga
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Extra resources for Fundamentals of Power Semiconductor Devices
However, it is worth noting that the doping concentration in SiC is much (about 100×) greater for a given breakdown voltage than for silicon as discussed later in the book. Consequently, the zero-bias depletion width for 4H-SiC devices is smaller than that for silicon devices with the same breakdown voltage. 00E+17 1017 Doping Concentration (cm-3) Fig. 5 Impact Ionization Coefficients The impact ionization coefficient for holes (αp) is defined as the number of electron–hole pairs created by a hole traversing 1 cm through the depletion layer along the direction of the electric field.
6 Describe the characteristics of an ideal power rectifier. 7 How do the characteristics of actual power rectifiers defer from those for the ideal device? 8 Describe the characteristics of an ideal power transistor. 9 How do the characteristics of actual power transistors defer from those for the ideal device? 10 Why are unipolar power device structures more attractive for applications than bipolar power devices? 11 Calculate Baliga’s figure-of-merit for a semiconductor with an electron mobility of 2,000 cm2 V−1 s−1 and critical breakdown electric field strength of 5 × 105 V cm−1.
Silicon carbide Schottky rectifiers have much lower drift region resistance, enabling design of very high voltage devices with low on-state voltage drop and excellent switching characteristics. SCHOTTKY CONTACT METAL (ANODE) DRIFT REGION RS SUBSTRATE OHMIC CONTACT METAL (CATHODE) Fig. 9 The power Schottky rectifier structure and its equivalent circuit D-MOSFET SOURCE U-MOSFET SOURCE GATE N+ P N+ P N-DRIFT REGION N-DRIFT REGION N+ SUBSTRATE N+ SUBSTRATE DRAIN DRAIN GATE Fig. 10 Silicon power MOSFET structures The most commonly used unipolar power transistor is the silicon power metal-oxide-semiconductor field-effect-transistor or MOSFET.