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The simple and low-cost technique of thermal oxidation technique is effectively used to prepare the MOSs nanowires. The sensing characteristics of the MOS sensors strongly depend on sizes and morphologies of ZnO nanostructures. The sensitivity formulas have been developed in order to explain all circumstances of gas sensors based on MOS nanowires. The size and morphology dependences on the sensitivity have been explained in terms of the two important parameters including surface-to-volume ratio and depletion layer width.
1(b)) and nanowires with rounded tip (Fig. 1(c)). ) revealed that the nanowires were grown almost perpendicularly on the substrates and their lengths were about 3 μm. It is known that each nucleation site usually supported growth of only one nanowires, but when the nucle‐ ation sites were close together, two nanowires combined into one with a larger diameter  and different surface morphologies were obtained. From XRD pattern (Fig. 2), a prominent ZnO (0002) peak is observed, which corresponds to the growth of ZnO nanowires along c-axis.
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